Report Touts Nanomemory as Wave of Computing's Future
Present day memory storage devices are facing increasing requirements of higher write/read speed and storage capacity, and are inching toward stagnation in capabilities for scaling-up silicon technology. So notes a new report by Global Industry Analysts Inc., a San Jose, Calif.-based publisher of market research studies.
The report, titled "Nanomemory: A Global Strategic Business Report," provides a comprehensive review of key market trends, product introductions/innovations, profiles of major players, and recent industry activity. The study presents commentary on various types of nanomemory technologies and provides long-term projections for global nanomemory market.
The popularity of disposable electronic products such as electronic greeting cards, RFID tags, electronic tickets, and smart cards among others has increased the need for improved memory options, the report says. Nanomemory is one such technology that is capable of providing efficient memory storage solutions for new-age devices, meeting pervasive computing requirements such as low-cost, high-speed memory for sensors and smart cards and non-volatile and high-capacity memory for handheld devices and mobile computers. These requirements can be efficiently fulfilled by nanomemory options, the report says.
The report notes that the global market for nanomemory is expected to reach $15.4 billion by 2015. MRAM is predicted to emerge as a suitable replacement for Flash/SRAM combo and battery supported RAM. Holographic memory also is expected to emerge as a strong contender for providing memory solutions for consumer video market and high-end data storage. Nanotubes, used particularly in memory chips, integrated chips, optoelectronics and displays, nano memory cards, and removable molecular memory media are nanotechnology-based memory storage devices that are likely to be employed in electronics.
For more information, or to purchase the 558-page report, go to www.strategyr.com/Nanomemory_Market_Report.asp.